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STGD3NB60SDT4, IGBTs N-Ch 600 Volt 3 Amp

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Код товара
8004828515
Артикул
STGD3NB60SDT4
Бренд
STMicroelectronics
ECCN
EAR99
HTSUS
8541.29.0095
Brand:
STMicroelectronics
Series
PowerMESHв„ў ->
Цена по запросу
(от 138,44 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Описание Транзистор БТИЗ, 600В 6A 48Вт TO252 Характеристики Категория Транзистор Тип БТИЗ Вид IGBT

Технические параметры

ECCNEAR99
HTSUS8541.29.0095
Brand:STMicroelectronics
SeriesPowerMESHв„ў ->
PackageTape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Series:STGD3NB60SD
Input TypeStandard
Вес, г4
Gate Charge18nC
Power - Max48W
RoHS StatusROHS3 Compliant
Technology:Si
REACH StatusREACH Unaffected
Subcategory:IGBTs
Manufacturer:STMicroelectronics
Mounting TypeSurface Mount
Package/Case:TO-252-3
Product Type:IGBT Transistors
REACH - SVHC:Details
Configuration:Single
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Qualification:AEC-Q101
Test Condition480V, 3A, 1kOhm, 15V
Mounting Style:SMD/SMT
Switching Energy1.15mJ (off)
Product Category:IGBT Transistors
Base Product NumberSTGD3 ->
Operating Temperature175В°C (TJ)
Td (on/off) @ 25В°C125Вµs/-
Other Related Documentshttp://www.st.com/web/catalog/sense_power/FM100/CL
Pd - Power Dissipation:48 W
Supplier Device PackageDPAK
Vce(on) (Max) @ Vge, Ic1.5V @ 15V, 3A
Reverse Recovery Time (trr)1.7Вµs
Continuous Collector Current:3 A
Gate-Emitter Leakage Current:+/-100 nA
Maximum Gate Emitter Voltage:-20 V, 20 V
Current - Collector (Ic) (Max)6A
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-65 C
Current - Collector Pulsed (Icm)25A
Moisture Sensitivity Level (MSL)1 (Unlimited)
Collector- Emitter Voltage VCEO Max:600 V
Continuous Collector Current Ic Max:6 A
Collector-Emitter Saturation Voltage:1.5 V
Continuous Collector Current at 25 C:6 A
Voltage - Collector Emitter Breakdown (Max)600V
Factory Pack Quantity: Factory Pack Quantity:2500

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