STGB20M65DF2, 166W -55-~+175-@(Tj) 40A 650V Trench Field Stop 80A 0.56mJ 0.14mJ D2PAK IGBTs ROHS
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- Код товара
- 8015831192
- Артикул
- STGB20M65DF2
- Бренд
- STMicroelectronics
- Brand:
- STMicroelectronics
- Series:
- STGB20M65DF2
- Вес, г
- 1.61
- Technology:
- Si
Цена по запросу
(от 180,66 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | STMicroelectronics |
| Series: | STGB20M65DF2 |
| Вес, г | 1.61 |
| Technology: | Si |
| Subcategory: | IGBTs |
| Manufacturer: | STMicroelectronics |
| Product Type: | IGBT Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | D2PAK-3 |
| Product Category: | IGBT Transistors |
| Pd - Power Dissipation: | 166 W |
| Gate-Emitter Leakage Current: | 250 uA |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Continuous Collector Current Ic Max: | 40 A |
| Collector-Emitter Saturation Voltage: | 1.55 V |
| Continuous Collector Current at 25 C: | 40 A |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |