STGB19NC60KDT4, БТИЗ 125 Вт -55-+150-@(Tj) 35А 600В 75А 0,255мДж 0,165мДж D2PAK IGBT
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- Код товара
- 8015830960
- Артикул
- STGB19NC60KDT4
- Бренд
- STMicroelectronics
- Type
- -
- Brand:
- STMicroelectronics
- Вес, г
- 1.47
- Technology:
- Si
Цена по запросу
(от 86,27 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
125 Вт 35A 600 В D2PAK IGBTs ROHS
Технические параметры
| Type | - |
| Brand: | STMicroelectronics |
| Вес, г | 1.47 |
| Technology: | Si |
| Subcategory: | IGBTs |
| Manufacturer: | STMicroelectronics |
| Package/Case: | D2PAK-3 |
| Product Type: | IGBT Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Product Category: | IGBTs |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Collector Current (Ic) | 35A |
| Factory Pack Quantity: | 1000 |
| Power Dissipation (Pd) | 125W |
| Pd - Power Dissipation: | 125 W |
| Turn?on Delay Time (Td(on)) | 30ns |
| Input Capacitance (Cies@Vce) | - |
| Turn?on Switching Loss (Eon) | 0.165mJ |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Total Gate Charge (Qg@Ic,Vge) | 55nC |
| Turn?off Delay Time (Td(off)) | 105ns |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Pulsed Collector Current (Icm) | 75A |
| Turn?off Switching Loss (Eoff) | 0.255mJ |
| Diode Reverse Recovery Time (Trr) | 31ns |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Continuous Collector Current Ic Max: | 35 A |
| Collector-Emitter Saturation Voltage: | 2 V |
| Continuous Collector Current at 25 C: | 35 A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.75V@15V, 12A |