STGB15H60DF, IGBTs Trench gate field-stop IGBT, H series 600 V, 15 A high speed
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004828489
- Артикул
- STGB15H60DF
- Бренд
- STMicroelectronics
- Type
- FS(Field Stop)
- Brand:
- STMicroelectronics
- Вес, г
- 2
- Technology:
- Si
Цена по запросу
(от 240,28 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
115 Вт 30 А 600 В FS (полевой выключатель) D2PAK IGBTs ROHS
Технические параметры
| Type | FS(Field Stop) |
| Brand: | STMicroelectronics |
| Вес, г | 2 |
| Technology: | Si |
| Subcategory: | IGBTs |
| Manufacturer: | STMicroelectronics |
| Package/Case: | D2PAK |
| Product Type: | IGBT Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Product Category: | IGBT Transistors |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Collector Current (Ic) | 30A |
| Factory Pack Quantity: | 1000 |
| Power Dissipation (Pd) | 115W |
| Pd - Power Dissipation: | 115 W |
| Input Capacitance (Cies@Vce) | - |
| Turn?on Switching Loss (Eon) | 0.136mJ |
| Gate-Emitter Leakage Current: | 250 nA |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Pulsed Collector Current (Icm) | 60A |
| Turn?off Switching Loss (Eoff) | 0.207mJ |
| Diode Reverse Recovery Time (Trr) | 103ns |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Collector-Emitter Saturation Voltage: | 1.6 V |
| Continuous Collector Current at 25 C: | 30 A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |