Транзистор IGBT STGB10NC60KDT4
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8055404911
- Артикул
- STGB10NC60KDT4
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- No
- RoHS
- Details
- Brand
- STMicroelectronics
Цена по запросу
(от 760 ₽)
Минимальный заказ: 2 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор БТИЗ, 600В 20A 65Вт DІPak Характеристики Категория Транзистор Тип БТИЗ Вид IGBT
Технические параметры
| Tab | Tab |
| PPAP | No |
| RoHS | Details |
| Brand | STMicroelectronics |
| Width | 9.35 mm |
| Brand: | STMicroelectronics |
| Height | 4.6 mm |
| Length | 10.4 mm |
| Series | STGB10NC60KD |
| Series: | STGB10NC60KDT4 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 7 |
| PCB changed | 2 |
| Part Status | Active |
| Technology: | Si |
| Unit Weight | 0.079014 oz |
| Channel Type | N |
| Manufacturer | STMicroelectronics |
| Package Type | D2PAK(TO-263) |
| Subcategory: | IGBTs |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Surface Mount |
| Product Type: | IGBT Transistors |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | D2PAK-3 |
| Mounting Style: | SMD/SMT |
| Package / Case: | D2PAK-3 |
| Switching Speed | 1MHz |
| Product Category | IGBT Transistors |
| Supplier Package | D2PAK |
| Product Category: | IGBT Transistors |
| Factory Pack Quantity | 1000 |
| Standard Package Name | TO-263 |
| Pd - Power Dissipation: | 65 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 65 W |
| Supplier Temperature Grade | Industrial |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 65 |
| Minimum Operating Temperature: | -55 C |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Collector Emitter Voltage | 600 V |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Continuous Collector Current Ic Max | 20 A |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Continuous Collector Current Ic Max: | 20 A |
| Maximum Continuous Collector Current | 20 A |
| Collector-Emitter Saturation Voltage: | 2.2 V |
| Continuous Collector Current at 25 C: | 20 A |
| Maximum Collector-Emitter Voltage (V) | 600 |
| Maximum Continuous Collector Current (A) | 20 |
| Maximum Gate Emitter Leakage Current (uA) | 0.1 |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Typical Collector Emitter Saturation Voltage (V) | 2.2 |