STF20N65M5, Power MOSFET, N Channel, 650 V, 18 A, 0.16 ohm, TO-220FP, Through Hole
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- Код товара
- 8199281892
- Артикул
- STF20N65M5
- Бренд
- STMicroelectronics
- Width
- 4.6mm
- Brand:
- STMicroelectronics
- Series
- MDmeshв(ў V
- Series:
- Mdmesh M5
Цена по запросу
(от 623 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Силовые МОП-транзисторы STM MDmeshV со сквозным отверстием
Технические параметры
| Width | 4.6mm |
| Brand: | STMicroelectronics |
| Series | MDmeshв(ў V |
| Series: | Mdmesh M5 |
| FET Type | N-Channel |
| Packaging | Tube |
| Pin Count | 3 |
| Vgs (Max) | В±25V |
| Fall Time: | 7.5 ns |
| Packaging: | Tube |
| Rise Time: | 7.5 ns |
| Technology | MOSFET(Metal Oxide) |
| Tradename: | MDmesh |
| Вес, г | 2.3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | STMicroelectronics |
| Package Type | TO-220FP |
| Subcategory: | MOSFETs |
| Корпус | TO-220 |
| Channel Mode: | Enhancement |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Through Hole |
| Package/Case: | TO-220-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | TO-220-3 Full Pack |
| Mounting Style: | Through Hole |
| Standard Package | 50 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 36 nC |
| Vgs(th) (Max) @ Id | 5V @ 250ВµA |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Operating Temperature | 150В°C(TJ) |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 9A, 10V |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 130 W |
| Power Dissipation (Max) | 30W(Tc) |
| Supplier Device Package | TO-220FP |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 30 W |
| Typical Gate Charge @ Vgs | 36 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
| Maximum Drain Source Voltage | 710 V |
| Maximum Operating Temperature | +150 °C |
| Drain to Source Voltage (Vdss) | 650V |
| Id - Continuous Drain Current: | 18 A |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 190 mΩ |
| Maximum Continuous Drain Current | 18 A |
| Rds On - Drain-Source Resistance: | 190 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 1345pF @ 100V |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Current - Continuous Drain (Id) @ 25В°C | 18A(Tc) |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Пороговое напряжение на затворе | -25 V, +25 V |
| Максимальное напряжение сток-исток Uси,В | 650 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 18 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 30 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 190 mOhms |