STF14NM50N, Транзистор N-МОП, полевой, 500В, 8А, 25Вт, TO220FP
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8015480845
- Артикул
- STF14NM50N
- Бренд
- STMicroelectronics
- HTS
- 8541.29.00.95
- Tab
- Tab
- Width
- 4.6mm
- Series
- MDmesh
Цена по запросу
(от 135,97 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 500В, 8А, 25Вт, TO220FP
Технические параметры
| HTS | 8541.29.00.95 |
| Tab | Tab |
| Width | 4.6mm |
| Series | MDmesh |
| Тип | MOSFET |
| EU RoHS | Compliant with Exemption |
| Military | No |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 3.5 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220FP |
| Корпус | TO-220F |
| Configuration | Single |
| Mounting Type | Through Hole |
| Package Width | 4.6(Max) |
| Package Height | 16.4(Max) |
| Package Length | 10.4(Max) |
| Product Category | Power MOSFET |
| Supplier Package | TO-220FP |
| Maximum IDSS (uA) | 1 |
| Process Technology | MDmesh II |
| Структура | N-МОП |
| Transistor Material | Si |
| Standard Package Name | TO-220 |
| Typical Fall Time (ns) | 22 |
| Typical Rise Time (ns) | 16 |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 25 W |
| Typical Gate Charge @ Vgs | 27 nC @ 10 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Способ монтажа | Through Hole |
| Maximum Drain Source Voltage | 500 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Power Dissipation (mW) | 25000 |
| Minimum Gate Threshold Voltage | 2V |
| Typical Gate Charge @ 10V (nC) | 27 |
| Typical Gate Charge @ Vgs (nC) | 27@10V |
| Maximum Drain Source Resistance | 320 mΩ |
| Maximum Gate Source Voltage (V) | ±25 |
| Typical Turn-On Delay Time (ns) | 12 |
| Тип проводимости | N |
| Maximum Continuous Drain Current | 12 A |
| Maximum Drain Source Voltage (V) | 500 |
| Typical Turn-Off Delay Time (ns) | 42 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 12 |
| Typical Input Capacitance @ Vds (pF) | 816@50V |
| Maximum Drain Source Resistance (mOhm) | 320@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Крутизна характеристики, S | - |
| Пороговое напряжение на затворе | 4V@250uA |
| Транспортная упаковка: размер/кол-во | 58*46*54/500 |
| Максимальное напряжение сток-исток Uси,В | 500 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 8 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 25 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |