STF13N80K5, Транзистор: N-MOSFET, SuperMESH5™, полевой, 800В, 7,6А, 35Вт
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- Код товара
- 8061903683
- Артикул
- STF13N80K5
- Бренд
- STMicroelectronics
- Case
- TO220FP
- Brand:
- STMicroelectronics
- Series:
- STF13N80K5
- Mounting
- THT
Цена по запросу
(от 467,51 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Высоковольтные МОП-транзисторы STMicroelectronics SuperMESH - сквозные
Технические параметры
| Case | TO220FP |
| Brand: | STMicroelectronics |
| Series: | STF13N80K5 |
| Mounting | THT |
| Fall Time: | 16 ns |
| Packaging: | Tube |
| Rise Time: | 16 ns |
| Technology | SuperMESH5™ |
| Tradename: | MDmesh |
| Вес, г | 1.7 |
| Technology: | Si |
| Manufacturer | STMicroelectronics |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Drain current | 7.6A |
| Manufacturer: | STMicroelectronics |
| Product Type: | MOSFET |
| Configuration: | Single |
| Kind of channel | enhanced |
| Kind of package | tube |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Transistor Type: | 1 N-Channel |
| Power dissipation | 35W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 29 nC |
| Type of transistor | N-MOSFET |
| Gate-source voltage | ±30V |
| Number of Channels: | 1 Channel |
| On-state resistance | 0.45Ω |
| Drain-source voltage | 800V |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 35 W |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Typical Turn-On Delay Time: | 16 ns |
| Typical Turn-Off Delay Time: | 42 ns |
| Id - Continuous Drain Current: | 12 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Features of semiconductor devices | ESD protected gate |
| Rds On - Drain-Source Resistance: | 370 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 800 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |