STF12N60M2, Transistor: N-MOSFET; unipolar
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8065534228
- Артикул
- STF12N60M2
- Бренд
- STMicroelectronics
- RoHS
- Details
- Type
- MDmesh M2
- Brand
- STMicroelectronics
- Type:
- MDmesh M2
Цена по запросу
(от 450 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Линейка высоковольтныx силовыx МОП-транзисторов от STMicroelecronics. Благодаря низкому заряду затвора и отличным выxодным емкостным xарактеристикам, устройства серии MDmesh M2 идеально подxодят для использования в импульсныx источникаx питания резонансного типа (преобразователяx LLC).
Технические параметры
| RoHS | Details |
| Type | MDmesh M2 |
| Brand | STMicroelectronics |
| Type: | MDmesh M2 |
| Width | 10.4 mm |
| Brand: | STMicroelectronics |
| Height | 4.6 mm |
| Length | 16.4 mm |
| Series | N-channel MDmesh |
| Product | Power MOSFET |
| Series: | STF12N60M2 |
| Product: | Power MOSFETs |
| Fall Time | 18 ns |
| Pin Count | 3 |
| Rise Time | 9.2 ns |
| Fall Time: | 18 ns |
| Rise Time: | 9.2 ns |
| Technology | Si |
| Tradename: | MDmesh |
| Вес, г | 2 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | STMicroelectronics |
| Package Type | TO-220FP |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 16 nC |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 16 nC |
| Number of Channels | 1 Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 1000 |
| Forward Diode Voltage | 1.6V |
| Pd - Power Dissipation | 25 W |
| Pd - Power Dissipation: | 25 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 25 W |
| Typical Gate Charge @ Vgs | 16 nC @ 10 V |
| Vgs - Gate-Source Voltage | 25 V |
| Typical Turn-On Delay Time | 9.2 ns |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 56 ns |
| Typical Turn-On Delay Time: | 9.2 ns |
| Maximum Drain Source Voltage | 600 V |
| Typical Turn-Off Delay Time: | 56 ns |
| Id - Continuous Drain Current | 9 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Id - Continuous Drain Current: | 9 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 450 mΩ |
| Maximum Continuous Drain Current | 9 A |
| Rds On - Drain-Source Resistance | 450 mOhms |
| Rds On - Drain-Source Resistance: | 450 mOhms |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V to 4 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |