Транзистор полевой STF11NM60ND
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8075239047
- Артикул
- STF11NM60ND
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- No
- Width
- 4.6mm
- Series
- FDmesh
Цена по запросу
(от 870 ₽)
Минимальный заказ: 2 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 600V 10A с 3-контактным разъемом (3+ язычка) для подключения к трубке 220FP
Технические параметры
| Tab | Tab |
| PPAP | No |
| Width | 4.6mm |
| Series | FDmesh |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220FP |
| Configuration | Single |
| Mounting Type | Through Hole |
| Product Category | Power MOSFET |
| Supplier Package | TO-220FP |
| Process Technology | FDmesh II |
| Transistor Material | Si |
| Standard Package Name | TO |
| Typical Fall Time (ns) | 9 |
| Typical Rise Time (ns) | 7 |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 25 W |
| Typical Gate Charge @ Vgs | 30 nC @ 10 V |
| Supplier Temperature Grade | Industrial |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation (mW) | 25000 |
| Minimum Gate Threshold Voltage | 3V |
| Typical Gate Charge @ 10V (nC) | 30 |
| Typical Gate Charge @ Vgs (nC) | 30@10V |
| Maximum Drain Source Resistance | 450 mΩ |
| Maximum Gate Source Voltage (V) | ±25 |
| Typical Turn-On Delay Time (ns) | 16 |
| Maximum Continuous Drain Current | 10 A |
| Maximum Drain Source Voltage (V) | 600 |
| Typical Turn-Off Delay Time (ns) | 50 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 10 |
| Typical Input Capacitance @ Vds (pF) | 850@50V |
| Maximum Drain Source Resistance (mOhm) | 450@10V |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |