STE53NC50, STE53NC50 STMicroelectronics Transistors MOSFETs N-CH 500V 53A 4-Pin ISOTOP Tube - Arrow.com
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001037631
- Артикул
- STE53NC50
- Бренд
- STMicroelectronics
- RoHS
- Details
- Type
- MOSFET
- Brand
- STMicroelectronics
- Type:
- MOSFET
Цена по запросу
(от 5 880 ₽)
Минимальный заказ: 4 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Модуль, одиночный транзистор, 500В, 33А, ISOTOP, Ugs: ±30В, винтами Характеристики Категория Транзистор Тип модуль Вид MOSFET
Технические параметры
| RoHS | Details |
| Type | MOSFET |
| Brand | STMicroelectronics |
| Type: | MOSFET |
| Width | 25.5 mm |
| Brand: | STMicroelectronics |
| Height | 9.1 mm |
| Length | 38.2 mm |
| Series | N-channel MDmesh |
| Series: | STE53NC50 |
| Fall Time | 38 ns |
| Packaging | Tube |
| Pin Count | 4 |
| Rise Time | 70 ns |
| Fall Time: | 38 ns |
| Packaging: | Tube |
| Rise Time: | 70 ns |
| Technology | Si |
| Tradename: | PowerMESH |
| Вес, г | 1 |
| Technology: | Si |
| Unit Weight | 1 oz |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | STMicroelectronics |
| Package Type | ISOTOP |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single Dual Source |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Screw Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | ISOTOP-4 |
| Mounting Style: | SMD/SMT |
| Package / Case: | ISOTOP-4 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 434 nC |
| Number of Channels | 1 Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 100 |
| Pd - Power Dissipation | 460 W |
| Pd - Power Dissipation: | 460 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 460 W |
| Typical Gate Charge @ Vgs | 310 nC @ 10 V |
| Vgs - Gate-Source Voltage | 30 V |
| Typical Turn-On Delay Time | 46 ns |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 46 ns |
| Maximum Drain Source Voltage | 500 V |
| Id - Continuous Drain Current | 53 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Forward Transconductance - Min | 42 S |
| Id - Continuous Drain Current: | 53 A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -65 C |
| Forward Transconductance - Min: | 42 S |
| Maximum Drain Source Resistance | 80 mΩ |
| Maximum Continuous Drain Current | 53 A |
| Rds On - Drain-Source Resistance | 80 mOhms |
| Rds On - Drain-Source Resistance: | 80 mOhms |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 100 |