STD9NM60N, Trans MOSFET N-CH 600V 6.5A 3-Pin(2+Tab) DPAK T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001169288
- Артикул
- STD9NM60N
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- No
- Brand:
- STMicroelectronics
- Series:
- STD9NM60N
Цена по запросу
(от 200 ₽)
Минимальный заказ: 160 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 600V 6.5A 3-контактный (2+Tab) DPAK T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| Brand: | STMicroelectronics |
| Series: | STD9NM60N |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Tradename: | MDmesh |
| Вес, г | 0.5 |
| PCB changed | 2 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | DPAK-3(TO-252-3) |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 17.4 nC |
| Process Technology | MDmesh II |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO-252 |
| Typical Fall Time (ns) | 26.7 |
| Typical Rise Time (ns) | 23 |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 70 W |
| Supplier Temperature Grade | Industrial |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Id - Continuous Drain Current: | 6.5 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 70000 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 17.4 |
| Typical Gate Charge @ Vgs (nC) | 17.4@10V |
| Maximum Gate Source Voltage (V) | ±25 |
| Typical Turn-On Delay Time (ns) | 28 |
| Maximum Drain Source Voltage (V) | 600 |
| Typical Turn-Off Delay Time (ns) | 52.5 |
| Rds On - Drain-Source Resistance: | 745 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 6.5 |
| Typical Input Capacitance @ Vds (pF) | 452@50V |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Maximum Drain Source Resistance (mOhm) | 745@10V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Крутизна характеристики, S | - |
| Пороговое напряжение на затворе | 4V@250uA |
| Максимальное напряжение сток-исток Uси,В | 600 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 6.5 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |