STD7NM60N, Trans MOSFET N-CH 600V 5A 3-Pin(2+Tab) DPAK T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001018824
- Артикул
- STD7NM60N
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- No
- RoHS
- Details
- Brand
- STMicroelectronics
Цена по запросу
(от 320 ₽)
Минимальный заказ: 100 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 600В, 3А, 45Вт, DPAK Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Tab | Tab |
| PPAP | No |
| RoHS | Details |
| Brand | STMicroelectronics |
| Width | 6.2mm |
| Series | MDmesh |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Technology | Si |
| Вес, г | 0.4 |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | STMicroelectronics |
| Package Type | DPAK(TO-252) |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | TO-252-3 |
| Transistor Type | 1 N-Channel |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Number of Channels | 1 Channel |
| Process Technology | MDmesh |
| Структура | N-Channel |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 2500 |
| Standard Package Name | TO-252 |
| Pd - Power Dissipation | 45 W |
| Typical Fall Time (ns) | 12 |
| Typical Rise Time (ns) | 10 |
| Особенности | высоковольтный |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 45 W |
| Typical Gate Charge @ Vgs | 14 nC @ 10 V |
| Supplier Temperature Grade | Industrial |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600 V |
| Id - Continuous Drain Current | 5 A |
| Maximum Operating Temperature | +150 °C |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Power Dissipation (mW) | 45000 |
| Minimum Gate Threshold Voltage | 2V |
| Typical Gate Charge @ 10V (nC) | 14 |
| Typical Gate Charge @ Vgs (nC) | 14@10V |
| Maximum Drain Source Resistance | 900 mΩ |
| Maximum Gate Source Voltage (V) | ±25 |
| Typical Turn-On Delay Time (ns) | 7 |
| Maximum Continuous Drain Current | 5 A |
| Maximum Drain Source Voltage (V) | 600 |
| Rds On - Drain-Source Resistance | 900 mOhms |
| Typical Turn-Off Delay Time (ns) | 26 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 5 |
| Typical Input Capacitance @ Vds (pF) | 363@50V |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Maximum Drain Source Resistance (mOhm) | 900@10V |
| Крутизна характеристики, S | - |
| Пороговое напряжение на затворе | 4V@250uA |
| Максимальное напряжение сток-исток Uси,В | 600 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 5 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 45 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |