STD6N62K3, MOSFET транзистор DPAK
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8014887944
- Артикул
- STD6N62K3
- Бренд
- STMicroelectronics
- HTS
- COMPONENTS
- Tab
- Tab
- PPAP
- No
- RoHS
- Details
Цена по запросу
(от 465 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
620 В 5,5 А 950 Мом при 10 В, 2,8 А 90 Вт 4.5V@50uA N-канальные МОП-транзисторы DPAK соответствуют требованиям ROHS
Технические параметры
| HTS | COMPONENTS |
| Tab | Tab |
| PPAP | No |
| RoHS | Details |
| SVHC | Yes |
| Type | N Channel |
| Brand | STMicroelectronics |
| Width | 6.2 mm |
| Height | 2.4 mm |
| Length | 6.6 mm |
| Series | N-channel MDmesh |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Fall Time | 19 ns |
| Packaging | Cut Tape |
| Pin Count | 3 |
| Rise Time | 12.5 ns |
| Automotive | No |
| Lead Shape | Gull-wing |
| Technology | Si |
| Вес, г | 0.52 |
| PCB changed | 2 |
| Part Status | Active |
| Unit Weight | 0.139332 oz |
| Channel Mode | Enhancement |
| Channel Type | N Channel |
| Manufacturer | STMicroelectronics |
| Configuration | Single |
| Package Width | 6.2(Max) |
| Mounting Style | SMD/SMT |
| Package / Case | TO-252-3 |
| Package Height | 2.4(Max) |
| Package Length | 6.6(Max) |
| Transistor Type | 1 N-Channel |
| EDA / CAD Models | STD6N62K3 by Ultra Librarian |
| Product Category | MOSFET |
| Qg - Gate Charge | 34 nC |
| Supplier Package | DPAK |
| Power Dissipation | 90Вт |
| Number of Channels | 1 Channel |
| Process Technology | MDmesh K3 |
| Структура | MOSFET |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 2500 |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Standard Package Name | TO-252 |
| Pd - Power Dissipation | 90 W |
| Power Dissipation (Pd) | 90W |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 20 |
| Typical Rise Time (ns) | 12 |
| Особенности | - |
| Vgs - Gate-Source Voltage | 30 V |
| Total Gate Charge (Qg@Vgs) | 25.7nC@10V |
| Typical Turn-On Delay Time | 13 ns |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 27 ns |
| Input Capacitance (Ciss@Vds) | 706pF@50V |
| Continuous Drain Current (Id) | 5.5A |
| Id - Continuous Drain Current | 5.5 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Maximum Power Dissipation (mW) | 90000 |
| Typical Gate Charge @ 10V (nC) | 34 |
| Typical Gate Charge @ Vgs (nC) | 34@10V |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 22 |
| Drain Source On State Resistance | 0.95Ом |
| Maximum Drain Source Voltage (V) | 620 |
| Rds On - Drain-Source Resistance | 1.28 Ohms |
| Typical Turn-Off Delay Time (ns) | 49 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Количество Выводов | 3вывод(-ов) |
| Монтаж транзистора | Surface Mount |
| Maximum Continuous Drain Current (A) | 5.5 |
| Typical Input Capacitance @ Vds (pF) | 875@50V |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Maximum Drain Source Resistance (MOhm) | 1200@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF@50V |
| Непрерывный Ток Стока | 5.5А |
| Пороговое Напряжение Vgs | 3.75В |
| Напряжение Измерения Rds(on) | 10В |
| Напряжение Истока-стока Vds | 620В |
| Стиль Корпуса Транзистора | TO-252(DPAK) |
| Пороговое напряжение на затворе | 4.5V@50uA |
| Максимальная Рабочая Температура | 150°C |
| Максимальное напряжение сток-исток Uси,В | 620 |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 950mΩ@10V, 2.8A |