STD5NM60T4, Транзистор N-MOSFET, полевой, 600В, 3,1А, 96Вт, DPAK
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8014887542
- Артикул
- STD5NM60T4
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- No
- Width
- 2.4mm
- Mounting
- Surface Mount
Цена по запросу
(от 200,71 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 600V 5A 3-контактный (2+Tab) DPAK T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| Width | 2.4mm |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.61 |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | IPAK(TO-251) |
| Configuration | Single |
| Mounting Type | Through Hole |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Process Technology | MDmesh |
| Структура | MOSFET |
| Forward Diode Voltage | 1.5V |
| Standard Package Name | TO-252 |
| Typical Fall Time (ns) | 10 |
| Typical Rise Time (ns) | 10 |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 96 W |
| Typical Gate Charge @ Vgs | 13 nC @ 10 V |
| Supplier Temperature Grade | Industrial |
| Maximum Gate Source Voltage | ±30 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 650 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation (mW) | 96000 |
| Minimum Gate Threshold Voltage | 4V |
| Typical Gate Charge @ 10V (nC) | 13 |
| Typical Gate Charge @ Vgs (nC) | 13@10V |
| Maximum Drain Source Resistance | 1 Ω |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 14 |
| Maximum Continuous Drain Current | 5 A |
| Maximum Drain Source Voltage (V) | 600 |
| Typical Turn-Off Delay Time (ns) | 23 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 5 |
| Typical Input Capacitance @ Vds (pF) | 400@25V |
| Maximum Drain Source Resistance (mOhm) | 1000@10V |
| Максимальное напряжение сток-исток Uси,В | 600 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 3.1 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 96 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |