STD3NK90ZT4, Транзистор, N-канал, 900В, 1.5A, 4.1Ом [DPAK]
![STD3NK90ZT4, Транзистор, N-канал, 900В, 1.5A, 4.1Ом [DPAK]](https://static.epl-electro.ru/lib/900/DOC034900583.jpg)
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8013569320
- Артикул
- STD3NK90ZT4
- Бренд
- STMicroelectronics
- HTS
- 8541.29.00.95
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
Цена по запросу
(от 130 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-MOSFET, полевой, 900В, 3А, 12Вт, DPAK Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| HTS | 8541.29.00.95 |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| Type: | MOSFET |
| Width | 6.2mm |
| Brand: | STMicroelectronics |
| Series | MDmesh, SuperMESH |
| EU RoHS | Compliant with Exemption |
| Series: | STD3NK90ZT4 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 18 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 7 ns |
| Tradename: | SuperMESH |
| Вес, г | 0.6 |
| PCB changed | 2 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | DPAK(TO-252) |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Surface Mount |
| Package Width | 6.2(Max) |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package Height | 2.4(Max) |
| Package Length | 6.6(Max) |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| EDA / CAD Models | STD3NK90ZT4 by Ultra Librarian |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 22.7 nC |
| Process Technology | SuperMESH |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N Channel; Continuous Drain Current Id |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO-252 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 18 |
| Typical Rise Time (ns) | 7 |
| Особенности | - |
| Pd - Power Dissipation: | 90 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 90 W |
| Typical Gate Charge @ Vgs | 22.7 nC @ 10 V |
| Supplier Temperature Grade | Industrial |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 18 ns |
| Maximum Drain Source Voltage | 900 V |
| Typical Turn-Off Delay Time: | 45 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 3 A |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 90000 |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 22.7 |
| Typical Gate Charge @ Vgs (nC) | 22.7@10V |
| Forward Transconductance - Min: | 2.7 S |
| Maximum Drain Source Resistance | 4.8 Ω |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 18 |
| Maximum Continuous Drain Current | 3 A |
| Maximum Drain Source Voltage (V) | 900 |
| Typical Turn-Off Delay Time (ns) | 45 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3 |
| Typical Input Capacitance @ Vds (pF) | 590@25V |
| Maximum Drain Source Resistance (mOhm) | 4800@10V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Пороговое напряжение на затворе | -30 V, +30 V |
| Максимальное напряжение сток-исток Uси,В | 900 V |
| Максимальный ток сток-исток при 25 С Iси макс..А | 1.5 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±30В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 4.8 Ohms |