STD3NK50ZT4, Trans MOSFET N-CH 500V 2.3A 3-Pin(2+Tab) DPAK T/R
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- Код товара
- 8001068759
- Артикул
- STD3NK50ZT4
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- No
- Type:
- MOSFET
- Width
- 6.2mm
Цена по запросу
(от 110 ₽)
Минимальный заказ: 2500 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 500В, 1,45А, 45Вт, DPAK Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Tab | Tab |
| PPAP | No |
| Type: | MOSFET |
| Width | 6.2mm |
| Brand: | STMicroelectronics |
| Series | MDmesh, SuperMESH |
| Тип | MOSFET |
| EU RoHS | Compliant with Exemption |
| Series: | STD3NK50ZT4 |
| FET Type | N-Channel |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Vgs (Max) | ±30V |
| Automotive | No |
| Fall Time: | 14 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 13 ns |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | DPAK(TO-252) |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | TO-252-3, DPAK(2 Leads+Tab), SC-63 |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Transistor Type: | 1 N-Channel |
| Мощность | рассеиваемая(max)-45 Вт |
| Описание | N-Channel 500 V 2.3A(Tc)45W(Tc)Surface Mount DPAK |
| Упаковка | REEL, 2500 шт. |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 11 nC |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Емкость, пФ | 280 |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Standard Package Name | TO-252 |
| Rds On (Max) @ Id, Vgs | 3.3Ohm @ 1.15A, 10V |
| Typical Fall Time (ns) | 14 |
| Typical Rise Time (ns) | 13 |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 45 W |
| Power Dissipation (Max) | 45W(Tc) |
| Supplier Device Package | DPAK |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 45 W |
| Typical Gate Charge @ Vgs | 11 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 8 ns |
| Способ монтажа | поверхностный(SMT) |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Maximum Drain Source Voltage | 500 V |
| Typical Turn-Off Delay Time: | 24 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 500 V |
| Id - Continuous Drain Current: | 2.3 A |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 45000 |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 11 |
| Typical Gate Charge @ Vgs (nC) | 11 10V |
| Forward Transconductance - Min: | 1.5 S |
| Maximum Drain Source Resistance | 3.3 Ω |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 8 |
| Тип проводимости | N |
| кол-во в упаковке | 2500 |
| Maximum Continuous Drain Current | 2.3 A |
| Maximum Drain Source Voltage (V) | 500 |
| Typical Turn-Off Delay Time (ns) | 24 |
| Rds On - Drain-Source Resistance: | 2.8 Ohms |
| Заряд затвора, нКл | 15 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 25 V |
| Maximum Continuous Drain Current (A) | 2.3 |
| Typical Input Capacitance @ Vds (pF) | 280 25V |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Maximum Drain Source Resistance (mOhm) | 3300 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A(Tc) |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Диапазон рабочих температур | -55…+150 °С |
| Пороговое напряжение на затворе | 4V@250uA |
| Максимальный ток стока (при Ta=25C), А | 2.3 |
| Максимально допустимое напряжение | затвор-исток(Vgs)±30 В |
| Транспортная упаковка: размер/кол-во | 58*46*46/2500 |
| Максимальное напряжение сток-исток, В | 500 |
| MSL(Уровень чувствительности к влажности) | 1 |
| Максимальное напряжение сток-исток Uси,В | 500 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 2.3 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 45 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |