Транзистор полевой STD3NK100Z
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8055405034
- Артикул
- STD3NK100Z
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- No
- Mounting
- Surface Mount
- ECCN (US)
- EAR99
Цена по запросу
(от 520 ₽)
Минимальный заказ: 3 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 1KВ 2.5A DPAK Характеристики Категория Транзистор Тип БТИЗ Вид IGBT
Технические параметры
| Tab | Tab |
| PPAP | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Maximum IDSS (uA) | 1 |
| Process Technology | SuperMESH |
| Standard Package Name | TO-252 |
| Typical Fall Time (ns) | 32 |
| Typical Rise Time (ns) | 7.5 |
| Особенности | - |
| Supplier Temperature Grade | Industrial |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 90000 |
| Typical Gate Charge @ 10V (nC) | 18 |
| Typical Gate Charge @ Vgs (nC) | 18@10V |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Output Capacitance (pF) | 53 |
| Typical Turn-On Delay Time (ns) | 15 |
| Maximum Drain Source Voltage (V) | 1000 |
| Typical Gate Plateau Voltage (V) | 6 |
| Typical Turn-Off Delay Time (ns) | 39 |
| Maximum Diode Forward Voltage (V) | 1.6 |
| Typical Gate to Drain Charge (nC) | 9.2 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Minimum Gate Threshold Voltage (V) | 3 |
| Typical Gate Threshold Voltage (V) | 3.75 |
| Typical Gate to Source Charge (nC) | 3.6 |
| Typical Reverse Recovery Time (ns) | 628 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 2.5 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 601@25V |
| Typical Reverse Recovery Charge (nC) | 2500 |
| Maximum Drain Source Resistance (mOhm) | 6000@10V |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Maximum Positive Gate Source Voltage (V) | 30 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 10 |
| Typical Drain Source Resistance @ 25°C (mOhm) | 5400@10V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 12@25V |
| Максимальная рассеиваемая мощность Pси макс..Вт | 90 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |