STD2NK100Z, STD2NK100Z STMicroelectronics Transistors MOSFETs N-CH 1KV 1.85A 3-Pin(2+Tab) DPAK T/R - Arrow.com
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001007285
- Артикул
- STD2NK100Z
- Бренд
- STMicroelectronics
- Tab
- Tab
- Case
- DPAK
- PPAP
- No
- Brand:
- STMicroelectronics
Цена по запросу
(от 150 ₽)
Минимальный заказ: 2500 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
STD2NK100Z STMicroelectronics Транзисторы MOSFETs N-CH 1 КВ 1,85 А 3-контактный(2+ вкладки) DPAK T/R - Arrow.com
Технические параметры
| Tab | Tab |
| Case | DPAK |
| PPAP | No |
| Brand: | STMicroelectronics |
| Series | SuperMESH |
| Series: | STD2NK100Z |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 32.5 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 6.5 ns |
| Technology | SuperMesh™ |
| Tradename: | SuperMESH |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | STMicroelectronics |
| Package Type | DPAK |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Drain current | 1.16A |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| RoHS Compliant | Yes |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Package / Case: | DPAK-3(TO-252-3) |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Transistor Type: | 1 N-Channel Power MOSFET |
| Power dissipation | 70W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 16 nC |
| Process Technology | SuperMESH |
| Type of transistor | N-MOSFET |
| Структура | N-Channel |
| Gate-source voltage | ±30V |
| Number of Channels: | 1 Channel |
| On-state resistance | 8.5Ω |
| Drain-source voltage | 1kV |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO-252 |
| Typical Fall Time (ns) | 32.5 |
| Typical Rise Time (ns) | 6.5 |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 70 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 7.2 ns |
| Maximum Drain Source Voltage | 1000 V |
| Typical Turn-Off Delay Time: | 41.5 ns |
| Id - Continuous Drain Current: | 1.85 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 70000 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 15 |
| Typical Gate Charge @ Vgs (nC) | 15@10V |
| Forward Transconductance - Min: | 2.4 S |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 7.2 |
| Maximum Continuous Drain Current | 1.85 A |
| Maximum Drain Source Voltage (V) | 1000 |
| Typical Turn-Off Delay Time (ns) | 41.5 |
| Features of semiconductor devices | ESD protected gate |
| Rds On - Drain-Source Resistance: | 8.5 Ohms |
| Maximum Gate Threshold Voltage (V) | 1k |
| Typical Gate Threshold Voltage (V) | 10 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 1.85 |
| Typical Input Capacitance @ Vds (pF) | 499@25V |
| Vds - Drain-Source Breakdown Voltage: | 1 kV |
| Maximum Drain Source Resistance (mOhm) | 8500@10V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 1.85 |
| Пороговое напряжение на затворе | 4V@250uA |
| Максимальное напряжение сток-исток Uси,В | 1000 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 1.85 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 70 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |