STD2NC45-1, Trans MOSFET N-CH 450V 1.5A 3-Pin(3+Tab) IPAK Tube
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001210113
- Артикул
- STD2NC45-1
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- No
- Brand:
- STMicroelectronics
- Series:
- STD2NC45-1
Цена по запросу
(от 91 ₽)
Минимальный заказ: 340 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 450V 1,5A с 3-контактным разъемом (3+ язычка) IPAK Tube
Технические параметры
| Tab | Tab |
| PPAP | No |
| Brand: | STMicroelectronics |
| Series: | STD2NC45-1 |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 12 ns |
| Lead Shape | Through Hole |
| Packaging: | Tube |
| Rise Time: | 4 ns |
| Tradename: | SuperMESH |
| Вес, г | 4 |
| PCB changed | 3 |
| Part Status | NRND |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Package/Case: | TO-251-3 |
| Product Type: | MOSFET |
| REACH - SVHC: | Details |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Product Category | Power MOSFET |
| Supplier Package | IPAK |
| Transistor Type: | 1 N-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 7 nC |
| Process Technology | SuperMESH |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO-251 |
| Typical Fall Time (ns) | 12 |
| Typical Rise Time (ns) | 4 |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 30 W |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 6.7 ns |
| Id - Continuous Drain Current: | 1.5 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 30000 |
| Minimum Operating Temperature: | -65 C |
| Typical Gate Charge @ 10V (nC) | 7 |
| Typical Gate Charge @ Vgs (nC) | 7@10V |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 6.7 |
| Maximum Drain Source Voltage (V) | 450 |
| Rds On - Drain-Source Resistance: | 4.5 Ohms |
| Maximum Gate Threshold Voltage (V) | 3.7 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Continuous Drain Current (A) | 1.5 |
| Typical Input Capacitance @ Vds (pF) | 160@25V |
| Vds - Drain-Source Breakdown Voltage: | 450 V |
| Maximum Drain Source Resistance (mOhm) | 4500@10V |
| Vgs th - Gate-Source Threshold Voltage: | 2.3 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | 4V@250uA |
| Максимальное напряжение сток-исток Uси,В | 450 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 1.5 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |