STD2LN60K3, Power MOSFET, N Channel, 600 V, 2 A, 4 ohm, TO-252 (DPAK), Surface Mount
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8012547214
- Артикул
- STD2LN60K3
- Бренд
- STMicroelectronics
- Brand:
- STMicroelectronics
- Series:
- STD2LN60K3
- Fall Time:
- 21 ns
- Rise Time:
- 8.5 ns
Цена по запросу
(от 164 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 600В, 1,26А, 45Вт, DPAK Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Brand: | STMicroelectronics |
| Series: | STD2LN60K3 |
| Fall Time: | 21 ns |
| Rise Time: | 8.5 ns |
| Tradename: | SuperMESH |
| Вес, г | 0.33 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | STMicroelectronics |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 12 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 45 W |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Typical Turn-On Delay Time: | 10 ns |
| Typical Turn-Off Delay Time: | 23.5 ns |
| Id - Continuous Drain Current: | 2 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 4.5 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs th - Gate-Source Threshold Voltage: | 4.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |