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Транзистор полевой STD2HNK60Z-1

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Код товара
8075252552
Артикул
STD2HNK60Z-1
Бренд
STMicroelectronics
Tab
Tab
ECCN
EAR99
PPAP
No
HTSUS
8541.29.0095
Цена по запросу
(от 300 ₽)
Минимальный заказ: 6 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Описание MOSFET силовой транзистор - [TO-251-3], Тип: N, Uси: 600 В, Iс(25°C): 2 А, Rси(вкл): 4.8 Ом, @Uзатв(ном): 10 В, Uзатв(макс): 30 В

Технические параметры

TabTab
ECCNEAR99
PPAPNo
HTSUS8541.29.0095
SeriesSuperMESHв„ў ->
PackageTube
FET TypeN-Channel
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
Vgs (Max)В±30V
AutomotiveNo
Lead ShapeThrough Hole
TechnologyMOSFET (Metal Oxide)
Вес, г1
PCB changed3
Part StatusActive
RoHS StatusROHS3 Compliant
Channel ModeEnhancement
Channel TypeN
REACH StatusREACH Unaffected
ConfigurationSingle
Mounting TypeThrough Hole
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Product CategoryPower MOSFET
Supplier PackageIPAK
Process TechnologySuperMESH
Vgs(th) (Max) @ Id4.5V @ 50ВµA
Base Product NumberSTD2HNK60 ->
Operating Temperature-55В°C ~ 150В°C (TJ)
Standard Package NameTO-251
Rds On (Max) @ Id, Vgs4.8Ohm @ 1A, 10V
Typical Fall Time (ns)50
Typical Rise Time (ns)30
Особенности-
Other Related Documentshttp://www.st.com/web/catalog/sense_power/FM100/CL
Power Dissipation (Max)45W (Tc)
Supplier Device PackageI-PAK
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Drain to Source Voltage (Vdss)600V
Maximum Power Dissipation (mW)45000
Typical Gate Charge @ 10V (nC)11
Typical Gate Charge @ Vgs (nC)11@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)600
Moisture Sensitivity Level (MSL)1 (Unlimited)
Typical Turn-Off Delay Time (ns)13
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Input Capacitance (Ciss) (Max) @ Vds280pF @ 25V
Maximum Continuous Drain Current (A)2
Typical Input Capacitance @ Vds (pF)280@25V
Drive Voltage (Max Rds On, Min Rds On)10V
Maximum Drain Source Resistance (mOhm)4800@10V
Current - Continuous Drain (Id) @ 25В°C2A (Tc)
Максимальная рассеиваемая мощность Pси макс..Вт45
Максимальное напряжение затвор-исток Uзи макс.,В±20В

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