MDmesh, SuperMESH N-Channel MOSFET, 1 A, 600 V, 3-Pin IPAK STD1NK60-1
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8014494133
- Артикул
- STD1NK60-1
- Бренд
- STMicroelectronics
- Case
- I2PAK
- Type:
- MOSFET
- Width
- 6.2mm
- Brand:
- STMicroelectronics
Цена по запросу
(от 180 ₽)
Минимальный заказ: 75 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 600В, 0,63А, 30Вт, I2PAK Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Case | I2PAK |
| Type: | MOSFET |
| Width | 6.2mm |
| Brand: | STMicroelectronics |
| Series | MDmesh, SuperMESH |
| Series: | STQ1HNK60R |
| Version | ESD |
| Mounting | THT |
| Pin Count | 3 |
| Fall Time: | 25 ns |
| Packaging: | Tube |
| Rise Time: | 5 ns |
| Technology | SuperMesh™ |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | IPAK(TO-251) |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Drain current | 0.63A |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Kind of channel | enhancement |
| Kind of package | tube |
| Mounting Style: | Through Hole |
| Package / Case: | TO-251-3 |
| Transistor Type: | 1 N-Channel |
| Power dissipation | 30W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 7 nC |
| Type of transistor | N-MOSFET |
| Структура | N-Channel |
| Gate-source voltage | ±30V |
| Number of Channels: | 1 Channel |
| On-state resistance | 8.5Ω |
| Transistor Material | Si |
| Drain-source voltage | 600V |
| Transistor Polarity: | N-Channel |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 3 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 30 W |
| Typical Gate Charge @ Vgs | 7 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 6.5 ns |
| Maximum Drain Source Voltage | 600 V |
| Typical Turn-Off Delay Time: | 19 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 1 A |
| Maximum Gate Threshold Voltage | 3.7V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 2.25V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 1 S |
| Maximum Drain Source Resistance | 8.5 Ω |
| Maximum Continuous Drain Current | 1 A |
| Rds On - Drain-Source Resistance: | 8 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.25 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Максимальное напряжение сток-исток Uси,В | 600 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 1 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 30 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |