STD16N65M5, MOSFETs N-Ch 650 Volt 12 Amp
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004827930
- Артикул
- STD16N65M5
- Бренд
- STMicroelectronics
- Type:
- Power MOSFETs
- Width
- 6.2mm
- Brand:
- STMicroelectronics
- Series
- MDmesh M5
Цена по запросу
(от 328,15 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 710В, 12А, 90Вт, DPAK Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Type: | Power MOSFETs |
| Width | 6.2mm |
| Brand: | STMicroelectronics |
| Series | MDmesh M5 |
| Series: | Mdmesh M5 |
| Pin Count | 3 |
| Fall Time: | 7 ns |
| Rise Time: | 9 ns |
| Tradename: | MDmesh |
| Вес, г | 0.33 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | DPAK(TO-252) |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 31 nC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N Channel; Continuous Drain Current Id |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 90 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 90 W |
| Typical Gate Charge @ Vgs | 31 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 25 ns |
| Maximum Drain Source Voltage | 650 V |
| Typical Turn-Off Delay Time: | 30 ns |
| Maximum Operating Temperature | +150 °C |
| Id - Continuous Drain Current: | 12 A |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 279 mΩ |
| Maximum Continuous Drain Current | 12 A |
| Rds On - Drain-Source Resistance: | 270 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Максимальное напряжение сток-исток Uси,В | 650 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 12 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |