STD12NF06T4, Транзистор N-МОП, полевой, 60В 12A 30Вт 0,1Ом TO252
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8024644327
- Артикул
- STD12NF06T4
- Бренд
- STMicroelectronics
- Tab
- Tab
- Case
- DPAK
- PPAP
- No
- Series
- STripFET II
Цена по запросу
(от 84 ₽)
Минимальный заказ: 10 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 60V 12A 3-контактный(2+Tab) DPAK T/R
Технические параметры
| Tab | Tab |
| Case | DPAK |
| PPAP | No |
| Series | STripFET II |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Technology | SuperMesh™ |
| Вес, г | 0.37 |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | STMicroelectronics |
| Package Type | DPAK |
| Polarisation | unipolar |
| Корпус | to252 |
| Configuration | Single |
| Drain current | 8.5A |
| Mounting Type | Surface Mount |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Power dissipation | 30W |
| Process Technology | STripFET II |
| Type of transistor | N-MOSFET |
| Структура | N-МОП |
| Gate-source voltage | ±20V |
| On-state resistance | 0.1Ω |
| Drain-source voltage | 60V |
| Standard Package Name | TO-252 |
| Typical Fall Time (ns) | 6 |
| Typical Rise Time (ns) | 18 |
| Особенности | - |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60 V |
| Maximum Power Dissipation (mW) | 30000 |
| Typical Gate Charge @ 10V (nC) | 10 |
| Typical Gate Charge @ Vgs (nC) | 10@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 70 |
| Typical Turn-On Delay Time (ns) | 7 |
| Maximum Continuous Drain Current | 12 A |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 17 |
| Features of semiconductor devices | ESD protected gate |
| Typical Gate to Drain Charge (nC) | 3.5 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Typical Gate to Source Charge (nC) | 3 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 12 |
| Typical Input Capacitance @ Vds (pF) | 315@25V |
| Typical Reverse Recovery Charge (nC) | 65 |
| Maximum Drain Source Resistance (mOhm) | 100@10V |
| Пороговое напряжение на затворе | 2.5V |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 12 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 30 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0, 1Ом |