STD10P6F6, MOSFETs P-Ch 60V 0.15Ohm 10A STripFET VI DeepGat
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- Код товара
- 8004827900
- Артикул
- STD10P6F6
- Бренд
- STMicroelectronics
- Case
- DPAK
- Width
- 7.45mm
- Brand:
- STMicroelectronics
- Series
- STripFET
Цена по запросу
(от 108,82 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор P-МОП, полевой, -60В, -7,2А, 35Вт, DPAK Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Case | DPAK |
| Width | 7.45mm |
| Brand: | STMicroelectronics |
| Series | STripFET |
| Series: | STD10P6F6 |
| Mounting | SMD |
| Pin Count | 3 |
| Fall Time: | 10 ns |
| Rise Time: | 7 ns |
| Tradename: | STripFET |
| Вес, г | 0.4 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | DPAK(TO-252) |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Drain current | -7.2A |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Transistor Type: | 1 P-Channel |
| Power dissipation | 35W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 6.4 nC |
| Type of transistor | P-MOSFET |
| Структура | P-Channel |
| Gate-source voltage | ±20V |
| Number of Channels: | 1 Channel |
| On-state resistance | 0.16Ω |
| Transistor Material | Si |
| Drain-source voltage | -60V |
| Transistor Polarity: | P-Channel |
| Forward Diode Voltage | 1.1V |
| Особенности | - |
| Pd - Power Dissipation: | 35 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 30 W |
| Typical Gate Charge @ Vgs | 6.4 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 64 ns |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 14 ns |
| Maximum Operating Temperature | +175 °C |
| Id - Continuous Drain Current: | 10 A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 160 mΩ |
| Maximum Continuous Drain Current | 10 A |
| Rds On - Drain-Source Resistance: | 160 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Крутизна характеристики, S | - |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 10 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 160 mOhms |