STB80NF10T4, Транзистор N-МОП, полевой, 100В 80A 300Вт 0,015Ом D Pak
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8048524655
- Артикул
- STB80NF10T4
- Бренд
- STMicroelectronics
- Type:
- MOSFET
- Width
- 9.35mm
- Brand:
- STMicroelectronics
- Series
- STripFET II
Цена по запросу
(от 340 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 100В 80A 300Вт 0,015Ом DІPak
Технические параметры
| Type: | MOSFET |
| Width | 9.35mm |
| Brand: | STMicroelectronics |
| Series | STripFET II |
| Series: | STB80NF10 |
| Pin Count | 3 |
| Fall Time: | 60 ns |
| Rise Time: | 80 ns |
| Tradename: | STripFET |
| Вес, г | 1.2 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | D2PAK(TO-263) |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | D2PAK-3 |
| Transistor Type: | 1 N-Channel Power MOSFET |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 135 nC |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 300 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 300 W |
| Typical Gate Charge @ Vgs | 135 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 26 ns |
| Maximum Drain Source Voltage | 100 V |
| Typical Turn-Off Delay Time: | 116 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 80 A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 50 S |
| Maximum Drain Source Resistance | 15 mΩ |
| Maximum Continuous Drain Current | 80 A |
| Rds On - Drain-Source Resistance: | 15 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |