STB7NK80ZT4, Транзистор: N-MOSFET, полевой, 800В, 3,3А, 125Вт, D2PAK
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8052962813
- Артикул
- STB7NK80ZT4
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- No
- Type:
- MOSFET
- Width
- 10.4mm
Цена по запросу
(от 285 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 800В, 3,3А, 125Вт, D2PAK Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Tab | Tab |
| PPAP | No |
| Type: | MOSFET |
| Width | 10.4mm |
| Brand: | STMicroelectronics |
| Series | MDmesh, SuperMESH |
| Series: | STB7NK80ZT4 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 20 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 12 ns |
| Вес, г | 2.07 |
| PCB changed | 2 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | D2PAK(TO-263) |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Surface Mount |
| Package/Case: | D2PAK-3(TO-263-3) |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 56 nC |
| Process Technology | SuperMESH |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N Channel; Continuous Drain Current Id |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO-263 |
| Typical Fall Time (ns) | 20 |
| Typical Rise Time (ns) | 12 |
| Pd - Power Dissipation: | 125 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 125 W |
| Typical Gate Charge @ Vgs | 40 nC @ 10 V |
| Supplier Temperature Grade | Industrial |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 20 ns |
| Maximum Drain Source Voltage | 800 V |
| Typical Turn-Off Delay Time: | 45 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 5.2 A |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 125000 |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 40 |
| Typical Gate Charge @ Vgs (nC) | 40@10V |
| Forward Transconductance - Min: | 5 S |
| Maximum Drain Source Resistance | 1.8 Ω |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 20 |
| Maximum Continuous Drain Current | 5.2 A |
| Maximum Drain Source Voltage (V) | 800 |
| Typical Turn-Off Delay Time (ns) | 45 |
| Rds On - Drain-Source Resistance: | 1.8 Ohms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 5.2 |
| Typical Input Capacitance @ Vds (pF) | 1138@25V |
| Vds - Drain-Source Breakdown Voltage: | 800 V |
| Maximum Drain Source Resistance (mOhm) | 1800@10V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |