STB75NF20, Trans MOSFET N-CH 200V 75A 3-Pin(2+Tab) D2PAK T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001108497
- Артикул
- STB75NF20
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- No
- Brand:
- STMicroelectronics
- Series
- STripFET
Цена по запросу
(от 682 ₽)
Минимальный заказ: 42 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 200V 75A 3-контактный (2+Tab) D2PAK T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| Brand: | STMicroelectronics |
| Series | STripFET |
| EU RoHS | Compliant with Exemption |
| Series: | STB75NF20 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 29 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 33 ns |
| Tradename: | STripFET |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | D²PAK |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | D2PAK-3(TO-263-3) |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 84 nC |
| Process Technology | STripFET |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO-263 |
| Typical Fall Time (ns) | 29 |
| Typical Rise Time (ns) | 33 |
| Особенности | - |
| Pd - Power Dissipation: | 190 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 53 ns |
| Maximum Drain Source Voltage | 200 V |
| Typical Turn-Off Delay Time: | 75 ns |
| Id - Continuous Drain Current: | 75 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 190000 |
| Minimum Operating Temperature: | -50 C |
| Typical Gate Charge @ 10V (nC) | 84 |
| Typical Gate Charge @ Vgs (nC) | 84 10V |
| Forward Transconductance - Min: | 40 S |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 53 |
| Maximum Continuous Drain Current | 75 A |
| Maximum Drain Source Voltage (V) | 200 |
| Typical Turn-Off Delay Time (ns) | 75 |
| Rds On - Drain-Source Resistance: | 34 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -50 |
| Maximum Continuous Drain Current (A) | 75 |
| Typical Input Capacitance @ Vds (pF) | 3260 25V |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Maximum Drain Source Resistance (mOhm) | 34 10V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Пороговое напряжение на затворе | 2…4 В |
| Максимальное напряжение сток-исток Uси,В | 200 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 75 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 190 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |