STB60NF06T4, Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
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- Код товара
- 8001209308
- Артикул
- STB60NF06T4
- Бренд
- STMicroelectronics
- Tab
- Tab
- Case
- D2PAK
- PPAP
- Unknown
- RoHS
- Details
Цена по запросу
(от 170 ₽)
Минимальный заказ: 1000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 60В 60A 110Вт 0,016Ом DІPak
Технические параметры
| Tab | Tab |
| Case | D2PAK |
| PPAP | Unknown |
| RoHS | Details |
| Type | MOSFET |
| Brand | STMicroelectronics |
| Type: | MOSFET |
| Width | 9.35 mm |
| Brand: | STMicroelectronics |
| Height | 4.6 mm |
| Length | 10.4 mm |
| Series | STB60NF06 |
| EU RoHS | Compliant with Exemption |
| Series: | STB60NF06 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Fall Time | 20 ns |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Rise Time | 108 ns |
| Automotive | Yes |
| Fall Time: | 20 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 108 ns |
| Technology | SuperMesh™ |
| Вес, г | 2.5 |
| PCB changed | 2 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | STMicroelectronics |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Drain current | 42A |
| Manufacturer: | STMicroelectronics |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | TO-263-3 |
| Qualification: | AEC-Q101 |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-263-3 |
| Transistor Type | 1 N-Channel |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Transistor Type: | 1 N-Channel |
| Power dissipation | 110W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 66 nC |
| Number of Channels | 1 Channel |
| Type of transistor | N-MOSFET |
| Структура | N-Channel |
| Gate-source voltage | ±20V |
| Number of Channels: | 1 Channel |
| On-state resistance | 16mΩ |
| Transistor Polarity | N-Channel |
| Drain-source voltage | 60V |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 1000 |
| Standard Package Name | TO-263 |
| Pd - Power Dissipation | 110 W |
| Typical Fall Time (ns) | 20 |
| Typical Rise Time (ns) | 108 |
| Особенности | автомобильные приложения |
| Pd - Power Dissipation: | 110 W |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 16 ns |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 43 ns |
| Typical Turn-On Delay Time: | 16 ns |
| Typical Turn-Off Delay Time: | 43 ns |
| Id - Continuous Drain Current | 60 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Forward Transconductance - Min | 20 S |
| Id - Continuous Drain Current: | 60 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 110000 |
| Minimum Operating Temperature: | -65 C |
| Typical Gate Charge @ 10V (nC) | 49 |
| Typical Gate Charge @ Vgs (nC) | 49@10V |
| Forward Transconductance - Min: | 20 S |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 16 |
| Maximum Drain Source Voltage (V) | 60 |
| Rds On - Drain-Source Resistance | 15 mOhms |
| Typical Turn-Off Delay Time (ns) | 43 |
| Features of semiconductor devices | ESD protected gate |
| Rds On - Drain-Source Resistance: | 15 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Continuous Drain Current (A) | 60 |
| Typical Input Capacitance @ Vds (pF) | 1810@25V |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Maximum Drain Source Resistance (mOhm) | 16@10V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 60 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 110 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |