STB32N65M5, Транзистор N-МОП, полевой, 650В, 15А, 150Вт, D2PAK
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- Код товара
- 8062957914
- Артикул
- STB32N65M5
- Бренд
- STMicroelectronics
- RoHS
- Details
- Type
- Power Mosfet
- Brand
- STMicroelectronics
- Series
- MDmesh M5
Цена по запросу
(от 1 177,07 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
): 0,095 Ом; Испытательное напряжение Rds (включено) Vgs: 10 В; Пороговое напряжение Vgs: 4 В; Рассеиваемая мощность соответствует требованиям Rohs: Да | Stmicroelectronics STB32N65M5
Технические параметры
| RoHS | Details |
| Type | Power Mosfet |
| Brand | STMicroelectronics |
| Series | MDmesh M5 |
| FET Type | N-Channel |
| Fall Time | 16 ns |
| Packaging | Reel |
| Rise Time | 12 ns |
| Vgs (Max) | ±25V |
| Technology | Si |
| Вес, г | 2 |
| Manufacturer | STMicroelectronics |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | TO-263-3 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 72 nC |
| Number of Channels | 1 Channel |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 1000 |
| Operating Temperature | 150°C(TJ) |
| Pd - Power Dissipation | 150 W |
| Rds On (Max) @ Id, Vgs | 119mOhm @ 12A, 10V |
| Power Dissipation (Max) | 150W(Tc) |
| Supplier Device Package | D2PAK |
| Vgs - Gate-Source Voltage | 25 V |
| Typical Turn-On Delay Time | 53 ns |
| Typical Turn-Off Delay Time | 56 ns |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Id - Continuous Drain Current | 24 A |
| Maximum Operating Temperature | +150 C |
| Drain to Source Voltage (Vdss) | 650 V |
| Rds On - Drain-Source Resistance | 95 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 3320 pF @ 100 V |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Current - Continuous Drain (Id) @ 25°C | 24A(Tc) |