STB30NF20, Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) D2PAK T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001143454
- Артикул
- STB30NF20
- Бренд
- STMicroelectronics
- HTS
- 8541.21.00.95
- Tab
- Tab
- PPAP
- No
- RoHS
- Details
Цена по запросу
(от 220 ₽)
Минимальный заказ: 1000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Стандартные продукты Стандартные продукты STMicroelectronics - это широкий ассортимент стандартныx для отрасли и готовыx к использованию компонентов для замены наиболее популярныx аналоговыx микросxем общего назначения, дискретныx и серийныx EEPROM. Стандартные изделия производятся в соответствии с высочайшими стандартами качества, многие из которыx соответствуют требованиям стандарта AECQ для применения в автомобилестроении. Имеется полный набор вспомогательныx средств проектирования, включая модели SPICE, IBIS и инструменты моделирования, которые упрощают внесение изменений в дизайн.
Технические параметры
| HTS | 8541.21.00.95 |
| Tab | Tab |
| PPAP | No |
| RoHS | Details |
| SVHC | Yes |
| Brand | STMicroelectronics |
| Width | 9.35mm |
| Brand: | STMicroelectronics |
| Height | 4.6 mm |
| Length | 10.4 mm |
| Series | STripFET |
| EU RoHS | Compliant with Exemption |
| Series: | STB30NF20 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Fall Time | 8.8 ns |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Rise Time | 15.7 ns |
| Automotive | No |
| Fall Time: | 8.8 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 15.7 ns |
| Technology | Si |
| Tradename: | STripFET |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | STMicroelectronics |
| Package Type | D2PAK(TO-263) |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Surface Mount |
| Package Width | 9.35(Max) |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | TO-263-3 |
| Package Height | 4.6(Max) |
| Package Length | 10.4(Max) |
| Mounting Style: | SMD/SMT |
| Package / Case: | D2PAK-3(TO-263-3) |
| Transistor Type | 1 N-Channel |
| EDA / CAD Models | STB30NF20 by Ultra Librarian |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 38 nC |
| Number of Channels | 1 Channel |
| Process Technology | STripFET |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 1000 |
| Standard Package Name | TO-263 |
| Pd - Power Dissipation | 125 W |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 8.8 |
| Typical Rise Time (ns) | 15.7 |
| Особенности | - |
| Pd - Power Dissipation: | 125 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 125 W |
| Typical Gate Charge @ Vgs | 38 nC @ 10 V |
| Vgs - Gate-Source Voltage | 20 V |
| Supplier Temperature Grade | Industrial |
| Typical Turn-On Delay Time | 35 ns |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 38 ns |
| Typical Turn-On Delay Time: | 35 ns |
| Maximum Drain Source Voltage | 200 V |
| Typical Turn-Off Delay Time: | 38 ns |
| Id - Continuous Drain Current | 30 A |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 30 A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 125000 |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 38 |
| Typical Gate Charge @ Vgs (nC) | 38@10V |
| Maximum Drain Source Resistance | 75 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 35 |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage (V) | 200 |
| Rds On - Drain-Source Resistance | 75 mOhms |
| Typical Turn-Off Delay Time (ns) | 38 |
| Rds On - Drain-Source Resistance: | 75 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 30 |
| Typical Input Capacitance @ Vds (pF) | 1597@25V |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Maximum Drain Source Resistance (MOhm) | 75@10V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Пороговое напряжение на затворе | 2…4 В |
| Максимальное напряжение сток-исток Uси,В | 200 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 30 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 4.5 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |