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STB20NM50FDT4, MOSFETs N-Ch 500 Volt 20 Amp

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Код товара
8005442076
Артикул
STB20NM50FDT4
Бренд
STMicroelectronics
Type:
MOSFET
Brand:
STMicroelectronics
FET Type
N-Channel
Vgs (Max)
±30V
Цена по запросу
(от 714,81 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

N-канальный 500 В 20А (Tc) 192 Вт (Tc) для поверxностного монтажа D2PAK

Технические параметры

Type:MOSFET
Brand:STMicroelectronics
FET TypeN-Channel
Vgs (Max)±30V
Fall Time:15 ns
Rise Time:20 ns
TechnologyMOSFET(Metal Oxide)
Вес, г4
Technology:Si
Subcategory:Transistors
Channel Mode:Enhancement
Manufacturer:STMicroelectronics
Mounting TypeSurface Mount
Package/Case:D2PAK-3(TO-263-3)
Product Type:MOSFETs
Configuration:Single
Package / CaseTO-263-3, D2PAK(2 Leads+Tab), TO-263AB
Mounting Style:SMD/SMT
Transistor Type:1 N-Channel
Product Category:MOSFETs
Qg - Gate Charge:38 nC
Vgs(th) (Max) @ Id5V @ 250µA
Number of Channels:1 Channel
Transistor Polarity:N-Channel
Operating Temperature150°C(TJ)
Factory Pack Quantity:1000
Rds On (Max) @ Id, Vgs250mOhm @ 10A, 10V
Pd - Power Dissipation:192 W
Power Dissipation (Max)192W(Tc)
Supplier Device PackageD2PAK
Vgs - Gate-Source Voltage:-30 V, +30 V
Typical Turn-On Delay Time:22 ns
Gate Charge (Qg) (Max) @ Vgs53 nC @ 10 V
Drain to Source Voltage (Vdss)500 V
Id - Continuous Drain Current:20 A
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-65 C
Rds On - Drain-Source Resistance:250 mOhms
Input Capacitance (Ciss) (Max) @ Vds1380 pF @ 25 V
Vds - Drain-Source Breakdown Voltage:500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C20A(Tc)
Vgs th - Gate-Source Threshold Voltage:5 V

Техническая документация