STB20N65M5, 650V 18A 160m @10V,9A 130W 3V 1 N-Channel D2PAK MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8048802677
- Артикул
- STB20N65M5
- Бренд
- STMicroelectronics
- Brand:
- STMicroelectronics
- Series:
- Mdmesh M5
- Fall Time:
- 7.5 ns
- Rise Time:
- 7.5 ns
Цена по запросу
(от 470,89 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Силовые МОП-транзисторы STM MDmeshV для поверxностного монтажа
Технические параметры
| Brand: | STMicroelectronics |
| Series: | Mdmesh M5 |
| Fall Time: | 7.5 ns |
| Rise Time: | 7.5 ns |
| Tradename: | MDmesh |
| Вес, г | 1.85 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | STMicroelectronics |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-263-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 36 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 130 W |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Id - Continuous Drain Current: | 18 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 190 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |