STB18N60M2, Trans МОП n-кан 600В 13A 3-Pin(2+Tab) D2PAK T/Ом
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8008512570
- Артикул
- STB18N60M2
- Бренд
- STMicroelectronics
- Width
- 9.35mm
- Brand:
- STMicroelectronics
- Series
- MDmesh M2
- Series:
- STB18N60M2
Цена по запросу
(от 310 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Trans МОП n-кан 600В 13A 3-Pin(2+Tab) D2PAK T/Ом
Технические параметры
| Width | 9.35mm |
| Brand: | STMicroelectronics |
| Series | MDmesh M2 |
| Series: | STB18N60M2 |
| Pin Count | 3 |
| Fall Time: | 10.6 ns |
| Rise Time: | 9 ns |
| Tradename: | MDmesh |
| Вес, г | 4 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | D2PAK(TO-263) |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Surface Mount |
| Package/Case: | D2PAK-3(TO-263-3) |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 21.5 nC |
| Структура | МОП-транзистор |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 110 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 110 W |
| Typical Gate Charge @ Vgs | 21.5 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 12 ns |
| Maximum Drain Source Voltage | 650 V |
| Typical Turn-Off Delay Time: | 47 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 13 A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 280 mΩ |
| Maximum Continuous Drain Current | 13 A |
| Rds On - Drain-Source Resistance: | 255 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Пороговое напряжение на затворе | 2…4 В |
| Максимальное напряжение сток-исток Uси,В | 600 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 13 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |