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STB12NM50T4, MOSFETs N-Ch 500 Volt 12 Amp

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Код товара
8004583722
Артикул
STB12NM50T4
Бренд
STMicroelectronics
Tab
Tab
PPAP
No
SVHC
Yes
Type
N Channel
Цена по запросу
(от 532,98 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

550 В 12A 160 Вт 350 Мом при 10 В, 6A 5 В при 50uA N-канальные МОП-транзисторы TO-263 ROHS

Технические параметры

TabTab
PPAPNo
SVHCYes
TypeN Channel
Width9.35mm
MountingSurface Mount
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
Вес, г1
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Package TypeD2PAK(TO-263)
ConfigurationSingle
Mounting TypeSurface Mount
Package Width9.35(Max)
Package Length10.4(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Process TechnologyMDmesh
Forward Diode Voltage1.5V
Operating Temperature-65℃~+150℃@(Tj)
Standard Package NameTO-263
Power Dissipation (Pd)160W
SVHC Exceeds ThresholdYes
Typical Rise Time (ns)10
Transistor ConfigurationSingle
Maximum Power Dissipation160 W
Typical Gate Charge @ Vgs28 nC @ 10 V
Supplier Temperature GradeIndustrial
Total Gate Charge (Qg@Vgs)39nC@10V
Maximum Gate Source Voltage±30 V
Number of Elements per Chip1
Input Capacitance (Ciss@Vds)1nF@25V
Continuous Drain Current (Id)12A
Maximum Operating Temperature+150 °C
Minimum Operating Temperature-65 °C
Maximum Gate Threshold Voltage5V
Maximum Power Dissipation (mW)160000
Minimum Gate Threshold Voltage3V
Typical Gate Charge @ 10V (nC)28
Typical Gate Charge @ Vgs (nC)28@10V
Maximum Drain Source Resistance350 mΩ
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)20
Maximum Continuous Drain Current12 A
Maximum Drain Source Voltage (V)500
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)12
Typical Input Capacitance @ Vds (pF)1000@25V
Maximum Drain Source Resistance (mOhm)350@10V

Техническая документация