SSVBC846BPDW1T1G, Bipolar Transistors - BJT SS DUAL GEN XSTR
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- Код товара
- 8005376357
- Артикул
- SSVBC846BPDW1T1G
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Вес, г
- 0.01
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 27 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi |
| Вес, г | 0.01 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | onsemi |
| Package/Case: | SOT-363-6 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Product Category: | Bipolar Transistors-BJT |
| Transistor Polarity: | NPN, PNP |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 380 mW |
| DC Current Gain hFE Max: | 475 |
| Gain Bandwidth Product fT: | 100 MHz |
| Emitter- Base Voltage VEBO: | 6 V |
| Collector- Base Voltage VCBO: | 80 V |
| Continuous Collector Current: | 100 mA |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hFE Min: | 200 |
| Collector- Emitter Voltage VCEO Max: | 65 V |
| Collector-Emitter Saturation Voltage: | 250 mV, 300 mV |