SST2222AHZGT116, Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 200 mW, SOT-23, Surface Mount
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- Код товара
- 8948935381
- Артикул
- SST2222AHZGT116
- Бренд
- Rohm
- Brand:
- ROHM Semiconductor
- Вес, г
- 0.03
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 22 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
40 В 200 МВт, 100 при 150 мА, 10 В 600 мА на биполярныx транзистораx NPN SOT-23 - BJT ROHS
Технические параметры
| Brand: | ROHM Semiconductor |
| Вес, г | 0.03 |
| Technology: | Si |
| Subcategory: | Transistors |
| Корпус | SOT-23(TO-236) |
| Manufacturer: | ROHM Semiconductor |
| Package/Case: | SOT-23-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | SST2222AHZG |
| Transistor Type | NPN |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Operating Temperature | - |
| Collector Current (Ic) | 600mA |
| Factory Pack Quantity: | 3000 |
| Power Dissipation (Pd) | 200mW |
| Pd - Power Dissipation: | 200 mW |
| DC Current Gain hFE Max: | 300 |
| Transition Frequency (fT) | 300MHz |
| Gain Bandwidth Product fT: | 300 MHz |
| Emitter- Base Voltage VEBO: | 6 V |
| DC Current Gain (hFE@Ic,Vce) | 100@150mA, 10V |
| Collector- Base Voltage VCBO: | 75 V |
| Continuous Collector Current: | 600 mA |
| Maximum DC Collector Current: | 600 mA |
| Maximum Operating Temperature: | +150 C |
| DC Collector/Base Gain hFE Min: | 35 |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector- Emitter Voltage VCEO Max: | 40 V |
| Collector-Emitter Saturation Voltage: | 1 V |
| Collector-Emitter Breakdown Voltage (Vceo) | 40V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 1V@500mA, 50mA |
| Макс. напр. к-э при заданном токе к и разомкнутой цепи б.(Uкэо макс),В | 40 |