SSM6N815R.LF
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070534628
- Бренд
- Toshiba
- Brand:
- Toshiba
- Вес, г
- 1
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 41 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзисторный MOSFET N-CH Si 100V 2A 6-контактный TSOP-F T/R
Технические параметры
| Brand: | Toshiba |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Toshiba |
| Package/Case: | TSOP-6 |
| Product Type: | MOSFETs |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 3.1 nC |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 1.4 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 7.5 ns, 7.5 ns |
| Typical Turn-Off Delay Time: | 21 ns, 21 ns |
| Id - Continuous Drain Current: | 2 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 4.8 S, 4.8 S |
| Rds On - Drain-Source Resistance: | 84 mOhms, 84 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |