SSM6N7002CFU,LF(T, 60V 3.2Ohm@4.5V,100mA 2 N-Channel MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070159808
- Артикул
- SSM6N7002CFU,LF(T
- Бренд
- Toshiba
- PPAP
- No
- Category
- Small Signal
- Material
- Si
- Mounting
- Surface Mount
Цена по запросу
(от 47 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH Si 60V 0,17A с 6-контактным разъемом US T/R
Технические параметры
| PPAP | No |
| Category | Small Signal |
| Material | Si |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Вес, г | 6.32 |
| PCB changed | 6 |
| Part Status | Active |
| Configuration | Dual |
| Package Width | 1.25 |
| Package Length | 2 |
| Supplier Package | US |
| Maximum IDSS (uA) | 1 |
| Typical Fall Time (ns) | 24 |
| Typical Rise Time (ns) | 3 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 285 |
| Typical Gate Charge @ Vgs (nC) | 0.27@4.5V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 2 |
| Maximum Drain-Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 7 |
| Maximum Gate Threshold Voltage (V) | 2.1 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Typical Input Capacitance @ Vds (pF) | 11@10V |
| Maximum Drain-Source Resistance (mOhm) | 3900@10V |
| Maximum Gate-Source Leakage Current (nA) | 2000 |