SSM6N58NU,LF, 30V 4A 84mOhm@2A,4.5V 1W 1V@1mA 2 N-Channel UDFN-6(2x2) MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8043945274
- Артикул
- SSM6N58NU,LF
- Бренд
- Toshiba
- ECCN
- EAR99
- HTSUS
- 8541.29.0095
- Brand:
- Toshiba
- Package
- Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Цена по запросу
(от 120 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Mosfet-матрица 2-канальная (двойная) 30В 4А 1 Вт для поверxностного монтажа 6-UDFN (2x2)
Технические параметры
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Brand: | Toshiba |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| FET Type | 2 N-Channel (Dual) |
| Вес, г | 6.32 |
| FET Feature | Logic Level Gate, 1.8V Drive |
| Power - Max | 1W |
| RoHS Status | RoHS Compliant |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Toshiba |
| Mounting Type | Surface Mount |
| Package/Case: | UDFN-6 |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFET |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Base Product Number | THNCF -> |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | 150В°C (TJ) |
| Factory Pack Quantity: | 3000 |
| Rds On (Max) @ Id, Vgs | 84mOhm @ 2A, 4.5V |
| Pd - Power Dissipation: | 1 W |
| Supplier Device Package | 6-UDFN (2x2) |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Typical Turn-On Delay Time: | 26 ns |
| Gate Charge (Qg) (Max) @ Vgs | 1.8nC @ 4.5V |
| Typical Turn-Off Delay Time: | 9 ns |
| Drain to Source Voltage (Vdss) | 30V |
| Id - Continuous Drain Current: | 4 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Rds On - Drain-Source Resistance: | 112 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 129pF @ 15V |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Current - Continuous Drain (Id) @ 25В°C | 4A |