SSM6L14FE(TE85L,F),Dual MOSFET, N and P Channel, 20 V, 20 V, 800 mA, 720 mA, 0.24 ohm
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8046470920
- Артикул
- SSM6L14FE(TE85L,F)
- Бренд
- Toshiba
- ECCN
- EAR99
- HTSUS
- 8541.21.0095
- Brand:
- Toshiba
- Package
- Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Цена по запросу
(от 140 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Mosfet-матрица N и P-канальная 20 В, 800 мА (Ta), 720 мА (Ta), 150 МВт (Ta) для поверxностного монтажа ES6
Технические параметры
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
| Brand: | Toshiba |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Series: | SSM6L14FE |
| FET Type | N and P-Channel |
| Tradename: | U-MOSIII/U-MOSV |
| Вес, г | 0.003 |
| FET Feature | Logic Level Gate, 1.5V Drive |
| Power - Max | 150mW (Ta) |
| RoHS Status | RoHS Compliant |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Toshiba |
| Mounting Type | Surface Mount |
| Package/Case: | SOT-563-6 |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Package / Case | SOT-563, SOT-666 |
| Mounting Style: | SMD/SMT |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 2 nC, 1.76 nC |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Структура | P-Channel |
| Base Product Number | 2SA1428 -> |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel, P-Channel |
| Operating Temperature | 150В°C |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V |
| Особенности | полевая сборка |
| Pd - Power Dissipation: | 150 mW |
| Supplier Device Package | ES6 |
| Vgs - Gate-Source Voltage: | -10 V, +10 V, -8 V, +8 V |
| Typical Turn-On Delay Time: | 18 ns, 11 ns |
| Gate Charge (Qg) (Max) @ Vgs | 2nC, 1.76nC @ 4.5V |
| Typical Turn-Off Delay Time: | 50 ns, 38 ns |
| Drain to Source Voltage (Vdss) | 20V |
| Id - Continuous Drain Current: | 80 mA, 720 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 1.05 S, 850 mS |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Rds On - Drain-Source Resistance: | 240 mOhms, 300 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 90pF, 110pF @ 10V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 350 mV, 1 V |
| Current - Continuous Drain (Id) @ 25В°C | 800mA (Ta), 720mA (Ta) |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.8 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.24 Ом |