SSM6J505NU.LF
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8073360091
- Бренд
- Toshiba
- RoHS
- Details
- Brand
- Toshiba
- Width
- 2 mm
- Brand:
- Toshiba
Цена по запросу
(от 46 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
PB-F UDFN6 PCH MOSFET (НИЗКОЧАСТОТНЫЙ) ТРАНЗИСТОР PD: 1 Вт VDS=20 В - Лента и катушка (Alt: SSM6J505NU,низкочастотный)
Технические параметры
| RoHS | Details |
| Brand | Toshiba |
| Width | 2 mm |
| Brand: | Toshiba |
| Height | 0.75 mm |
| Length | 2 mm |
| Series | SSM6J505 |
| Packaging | Cut Tape |
| Technology | Si |
| Вес, г | 1 |
| Technology: | Si |
| Manufacturer | Toshiba |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Toshiba |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | UDFN6B-6 |
| Mounting Style: | SMD/SMT |
| Package / Case: | UDFN-6 |
| Transistor Type | 1 P-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 37.6 nC |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 37.6 nC |
| Number of Channels | 1 Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity | P-Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity | 3000 |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation | 1.25 W |
| Pd - Power Dissipation: | 1.25 W |
| Vgs - Gate-Source Voltage | 6 V |
| Vgs - Gate-Source Voltage: | -6 V, +6 V |
| Id - Continuous Drain Current | -12 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Id - Continuous Drain Current: | 12 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance | 61 mOhms |
| Rds On - Drain-Source Resistance: | 61 mOhms |
| Vds - Drain-Source Breakdown Voltage | -12 V |
| Vds - Drain-Source Breakdown Voltage: | 12 V |
| Vgs th - Gate-Source Threshold Voltage | -0.3 V to-1 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |