SSM6G18NU.LF
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070646730
- Бренд
- Toshiba
- Brand:
- Toshiba
- Packaging:
- Reel, Cut Tape
- Вес, г
- 1
- Technology:
- Si
Цена по запросу
(от 28 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Toshiba |
| Packaging: | Reel, Cut Tape |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Toshiba |
| Package/Case: | UDFN-6 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 4.6 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 1 W |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Typical Turn-On Delay Time: | 17 ns |
| Typical Turn-Off Delay Time: | 43 ns |
| Id - Continuous Drain Current: | 2 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 112 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 300 mV |