SSM3K35CTC,L3F(T, Trans MOSFET N-CH Si 20V 0.25A 3-Pin CST-C T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8002222365
- Артикул
- SSM3K35CTC,L3F(T
- Бренд
- Toshiba
- PPAP
- No
- Category
- Small Signal
- Material
- Si
- Mounting
- Surface Mount
Цена по запросу
(от 14 ₽)
Минимальный заказ: 2300 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH Si 20V 0,25A с 3-контактным разъемом CST-C T/R
Технические параметры
| PPAP | No |
| Category | Small Signal |
| Material | Si |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single |
| Package Width | 0.6 |
| Package Length | 0.8 |
| Supplier Package | CST-C |
| Maximum IDSS (uA) | 1 |
| Структура | N-Channel |
| Typical Fall Time (ns) | 5.5 |
| Typical Rise Time (ns) | 2 |
| Особенности | - |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 500 |
| Typical Gate Charge @ Vgs (nC) | 0.34@4.5V |
| Maximum Gate-Source Voltage (V) | ±10 |
| Typical Output Capacitance (pF) | 6 |
| Typical Turn-On Delay Time (ns) | 2 |
| Maximum Drain-Source Voltage (V) | 20 |
| Typical Gate Plateau Voltage (V) | 1.25 |
| Typical Turn-Off Delay Time (ns) | 6.5 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Gate to Drain Charge (nC) | 0.16 |
| Maximum Gate Threshold Voltage (V) | 1 |
| Minimum Gate Threshold Voltage (V) | 0.35 |
| Typical Gate to Source Charge (nC) | 0.09 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Junction Temperature (°C) | 150 |
| Typical Input Capacitance @ Vds (pF) | 18@10V |
| Maximum Drain-Source Resistance (mOhm) | 1100@4.5V |
| Maximum Gate-Source Leakage Current (nA) | 1000 |
| Maximum Positive Gate-Source Voltage (V) | 10 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 0.6 |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 2400@1.2V, 1400@1.8V, 1100@2.5V, 750@4.5V, 1700@1.5V |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.5 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 5@10V |
| Пороговое напряжение на затворе | 4V@250uA |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.25 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |