SSM3K35AFS,LF, 20V 250mA 500mW 1.1 @4.5V,150mA 1V 1 N-Channel SC-75(SOT-416) MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8048300068
- Артикул
- SSM3K35AFS,LF
- Бренд
- Toshiba
- ECCN
- EAR99
- HTSUS
- 8541.21.0095
- Brand:
- Toshiba
- Series
- U-MOSIII ->
Цена по запросу
(от 37 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный SSM для поверxностного монтажа 20 В 250 мА (Ta) 500 МВт (Ta)
Технические параметры
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
| Brand: | Toshiba |
| Series | U-MOSIII -> |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| FET Type | N-Channel |
| Vgs (Max) | В±10V |
| Fall Time: | 5.5 ns |
| Rise Time: | 2 ns |
| Technology | MOSFET (Metal Oxide) |
| Вес, г | 0.06 |
| RoHS Status | RoHS Compliant |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Toshiba |
| Mounting Type | Surface Mount |
| Package/Case: | SSM-3 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Package / Case | SC-75, SOT-416 |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 340 pC |
| Vgs(th) (Max) @ Id | 1V @ 100ВµA |
| Base Product Number | TLP3442 -> |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | 150В°C (TJ) |
| Factory Pack Quantity: | 3000 |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 150mA, 4.5V |
| Pd - Power Dissipation: | 500 mW |
| Power Dissipation (Max) | 500mW (Ta) |
| Supplier Device Package | SSM |
| Vgs - Gate-Source Voltage: | -10 V, +10 V |
| Typical Turn-On Delay Time: | 2 ns |
| Gate Charge (Qg) (Max) @ Vgs | 0.34nC @ 4.5V |
| Typical Turn-Off Delay Time: | 6.5 ns |
| Drain to Source Voltage (Vdss) | 20V |
| Id - Continuous Drain Current: | 250 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 0.5 S |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Rds On - Drain-Source Resistance: | 1.1 Ohms |
| Input Capacitance (Ciss) (Max) @ Vds | 36pF @ 10V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Current - Continuous Drain (Id) @ 25В°C | 250mA (Ta) |