SSM3K333R.LF[T
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8068992411
- Бренд
- HXY
- PPAP
- No
- Type
- Power MOSFET
- Brand:
- Toshiba
- EU RoHS
- Compliant
Цена по запросу
(от 5,10 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзисторный MOSFET N-CH Si 30V 6A 3-контактный SOT-23F T/R
Технические параметры
| PPAP | No |
| Type | Power MOSFET |
| Brand: | Toshiba |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| Polarity | N |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Flat |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-23F |
| Rad Hardened | No |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Toshiba |
| Package/Case: | SOT-23F-3 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Qualification: | AEC-Q100 |
| Mounting Style: | SMD/SMT |
| Product Category | Power MOSFET |
| Supplier Package | SOT-23F |
| Transistor Type: | 1 N-Channel |
| Maximum IDSS (uA) | 1 |
| Power Dissipation | 2(W) |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 3.4 nC |
| Number of Elements | 1 |
| Process Technology | U-MOS VII-H |
| Number of Channels: | 1 Channel |
| Drain-Source On-Volt | 30(V) |
| Operating Temp Range | -55C to 150C |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 2 W |
| Continuous Drain Current | 6(A) |
| Gate-Source Voltage (Max) | ±20(V) |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 12 ns |
| Typical Turn-Off Delay Time: | 9 ns |
| Id - Continuous Drain Current: | 6 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 2000 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ Vgs (nC) | 3.4 4.5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Drain Source Voltage (V) | 30 |
| Rds On - Drain-Source Resistance: | 107 mOhms |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 6 |
| Operating Temperature Classification | Military |
| Typical Input Capacitance @ Vds (pF) | 436 15V |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Maximum Drain Source Resistance (MOhm) | 28 10V |
| Vgs th - Gate-Source Threshold Voltage: | 1.3 V |
| Maximum Gate Source Leakage Current (nA) | 100 |