SSM3K122TU,LF, MOSFETs Small Signal MOSFET N-ch VDSS=20V, VGSS=+/-10V, ID=2.0A, RDS(ON)=0.123Ohm @ 4V, in UFM package
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070690011
- Артикул
- SSM3K122TU,LF
- Бренд
- Toshiba
- ECCN
- EAR99
- HTSUS
- 8541.21.0095
- Brand:
- Toshiba
- Package
- Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Цена по запросу
(от 220 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный UFM для поверxностного монтажа 20 В 2 А (Ta) мощностью 500 МВт (Ta)
Технические параметры
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
| Brand: | Toshiba |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| FET Type | N-Channel |
| Vgs (Max) | В±10V |
| Technology | MOSFET (Metal Oxide) |
| Вес, г | 0.01 |
| RoHS Status | RoHS non-compliant |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Toshiba |
| Mounting Type | Surface Mount |
| Package/Case: | UFM-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | 3-SMD, Flat Lead |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 3.4 nC |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Base Product Number | RN1313 -> |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | 150В°C |
| Factory Pack Quantity: | 3000 |
| Rds On (Max) @ Id, Vgs | 123mOhm @ 1A, 4V |
| Pd - Power Dissipation: | 500 mW |
| Power Dissipation (Max) | 500mW (Ta) |
| Supplier Device Package | UFM |
| Vgs - Gate-Source Voltage: | -10 V, +10 V |
| Typical Turn-On Delay Time: | 8 ns |
| Gate Charge (Qg) (Max) @ Vgs | 3.4nC @ 4V |
| Typical Turn-Off Delay Time: | 9 ns |
| Drain to Source Voltage (Vdss) | 20V |
| Id - Continuous Drain Current: | 2 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Rds On - Drain-Source Resistance: | 123 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 195pF @ 10V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Current - Continuous Drain (Id) @ 25В°C | 2A (Ta) |