SSM3J56MFV.L3F[T
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8073433356
- Бренд
- Toshiba
- PPAP
- No
- Material
- Si
- Mounting
- Surface Mount
- Packaging
- Tape and Reel
Цена по запросу
(от 14 ₽)
Минимальный заказ: 16000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH Si 20V 0,8A с 3-контактным разъемом VESM T/R
Технические параметры
| PPAP | No |
| Material | Si |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Flat |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Package Width | 0.8 |
| Package Length | 1.2 |
| Product Category | Small Signal |
| Supplier Package | VESM |
| Maximum IDSS (uA) | 1 |
| Process Technology | U-MOS VI |
| Standard Package Name | SOT |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 800 |
| Typical Gate Charge @ Vgs (nC) | 1.6@4.5V |
| Maximum Gate Source Voltage (V) | ±8 |
| Maximum Drain Source Voltage (V) | 20 |
| Maximum Gate Threshold Voltage (V) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.8 |
| Typical Input Capacitance @ Vds (pF) | 100@10V |
| Maximum Drain Source Resistance (mOhm) | 390@4.5V |
| Maximum Gate Source Leakage Current (nA) | 1000 |