SSM3J358R,LF, 20V 6A 22.1mOhm@8V,6A 1W 1V@1mA 1 PIece P-Channel SOT-23F MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062892251
- Артикул
- SSM3J358R,LF
- Бренд
- Toshiba
- RoHS
- Details
- Brand
- Toshiba
- Brand:
- Toshiba
- Packaging
- MouseReel
Цена по запросу
(от 24 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзистор с низким сопротивлением ID МОП-транзистора=-6A VDSS=-20 В
Технические параметры
| RoHS | Details |
| Brand | Toshiba |
| Brand: | Toshiba |
| Packaging | MouseReel |
| Technology | Si |
| Вес, г | 0.04 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Manufacturer | Toshiba |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Toshiba |
| Package/Case: | SOT-23F-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23F-3 |
| Mounting Style: | SMD/SMT |
| Transistor Type | 1 P-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 38.5 nC |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 38.5 nC |
| Number of Channels | 1 Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity | P-Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity | 3000 |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation | 2 W |
| Pd - Power Dissipation: | 2 W |
| Vgs - Gate-Source Voltage | 10 V |
| Typical Turn-On Delay Time | 35 ns |
| Vgs - Gate-Source Voltage: | -10 V, +10 V |
| Typical Turn-Off Delay Time | 393 ns |
| Typical Turn-On Delay Time: | 35 ns |
| Typical Turn-Off Delay Time: | 393 ns |
| Id - Continuous Drain Current | -6 A |
| Maximum Operating Temperature | +150 C |
| Forward Transconductance - Min | 12.3 S |
| Id - Continuous Drain Current: | 6 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 12.3 S |
| Rds On - Drain-Source Resistance | 17.5 mOhms |
| Rds On - Drain-Source Resistance: | 17.5 mOhms |
| Vds - Drain-Source Breakdown Voltage | -20 V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage | -1 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |